SGH40N60UFDTU
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Specification
Vgs - 栅极-源极电压 | 15ns/65ns |
晶体管极性 | 分立半导体产品,晶体管-UGBT,MOSFET-单 |
Pd-功率耗散 | 160W |
封装 | TO-3P-3,SC-65-3 |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 600V |
安装方式 | 通孔 |
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Vce=600V,Ic=40A,Vce(sat)=2.1V
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SGH40N60UFDTU
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Vce=600V,Ic=40A,Vce(sat)=2.1V
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