SMMBFJ175LT1G
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Specification
封装 | SOT-23(TO-236AB) |
Pd-功率耗散 | 225mW |
晶体管极性 | JFET |
资格等级 | AEC-Q101 |
工作温度范围 | -55°C~150°C(TJ) |
安装方式 | 表面贴装型 |
Vgs - 栅极-源极电压 | 3V@10nA |
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TRANS JFET P-CH 30V SOT23
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