SMMBFJ177LT1G
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Specification
封装 | TO-236AB |
安装方式 | SMD/SMT |
晶体管极性 | JFET |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 225 mW |
Id-连续漏极电流 | - 1 nA |
资格等级 | AEC-Q101 |
Vgs - 栅极-源极电压 | 800mV@10nA |
Rds On-漏源导通电阻 | 300 Ohms |
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