SMUN5237DW1T1G
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Specification
集电极电流Ic | 100mA |
集电极—发射极最大电压 VCEO | 250mV@5mA,10mA |
Pd-功率耗散 | 187mW |
最大集电极截止电流 | 500nA |
资格等级 | AEC-Q101 |
晶体管极性 | 2个NPN预偏压式(双) |
封装 | SOT-363 |
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Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/S
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