SVD2955T4G
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Specification
Pd-功率耗散 | 55W(Tj) |
工作温度范围 | -55°C~175°C(TJ) |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60V |
封装 | DPAK |
Rds On-漏源导通电阻 | 180mΩ @ 6A,10V |
Id-连续漏极电流 | 12A |
Vgs - 栅极-源极电压 | 4V @ 250uA |
安装方式 | 表面贴装 |
资格等级 | AEC-Q101 |
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