SVD5867NLT4G
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Specification
工作温度范围 | -55°C~175°C(TJ) |
安装方式 | 表面贴装型 |
晶体管极性 | MOSFET |
封装 | TO-252-3 |
Pd-功率耗散 | 3.3W(Ta),43W(Tc) |
Vds-漏源极击穿电压 | 60V |
资格等级 | AEC-Q101 |
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SVD5867NLT4G
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表面贴装型 N 通道 60V 22A(Tc) 3.3W(Ta),43W(Tc) DPAK-3
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