BSP52T1G
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Specification
RoHS | yes |
Configuration | Single |
Transistor polarity | NPN |
Collector - Emitter maximum voltage VCEO | 80 V |
Emitter-base voltage VEBO | 5 V |
Collector-base voltage VCBO | 90 V |
Maximum DC collector current | 1 A |
Pd - Power Dissipation | 0.8 W |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
The maximum working temperature | + 150 C |
Series | BSP52 |
Continuous collector current | 1 A |
DC collector / Base Gain hfe Min | 1000, 2000 |
Height | 1.57 mm |
Length | 6.5 mm |
Minimum working temperature | - 65 C |
Factory packing quantity | 1000 |
Width | 3.5 mm |
Unit weight | 210 mg |
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