2N7002KDW_R1_00001
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Specification
Rds On-漏源导通电阻 | 3 Ohms |
Qg-栅极电荷 | 0.8 nC |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 115 mA |
Vgs - 栅极-源极电压 | - 20 V, + 20 V |
Vds-漏源极击穿电压 | 60 V |
Pd-功率耗散 | 200 mW |
工作温度范围 | - 55 C~+ 150 C |
封装 | SOT-363-6 |
安装方式 | SMD/SMT |
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2N7002KDW_R1_00001
PANJIT
MOSFET /K27/TR/7"/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ///
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