2N7002_R1_00001
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Specification
晶体管极性 | N沟道 |
Id-连续漏极电流 | 250mA |
Pd-功率耗散 | 350mW |
Vds-漏源极击穿电压 | 60V |
Vgs - 栅极-源极电压 | 2.5V @ 250uA |
封装 | SOT-23 |
Rds On-漏源导通电阻 | 5Ω @ 500mA,10V |
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