PJC7407_R1_00001
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Specification
Qg-栅极电荷 | 5.4 nC |
封装 | SOT-323-3 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 20 V |
Pd-功率耗散 | 350 mW |
Rds On-漏源导通电阻 | 200 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 1.3 A |
Vgs - 栅极-源极电压 | - 12 V, + 12 V |
安装方式 | SMD/SMT |
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PJC7407_R1_00001
PANJIT
MOSFET /C07/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI03/PJ///
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