N0434N-S23-AY
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Specification
Vds-漏源极击穿电压 | 40V |
晶体管极性 | MOSFET",,"子类别 |
Pd-功率耗散 | 1.5W(Ta),119W(Tc) |
封装 | TO-262-3 |
安装方式 | Through Hole |
工作温度范围 | 150°C(TJ) |
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