RJH65D27BDPQ-A0#T2
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Mfr. Part #:
RJH65D27BDPQ-A0#T2
Allchips #:
R001-RJH65D27BDPQ-A0#T2-62-H-1801-X-N
Description:
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247A Tube
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Renesas,RJH65D27BDPQ-A0#T2 is available at Allchips.100% original and new guarantee. If
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Specification
封装 | TO-247A-3 |
安装方式 | Through Hole |
集电极—发射极最大电压 VCEO | 650 V |
栅极/发射极最大电压 | 30 V |
工作温度范围 | - 55 C~+ 175 C |
集电极电流Ic | 100 A |
Pd-功率耗散 | 375 W |
栅极阈值电压-VGE(th) | 30 V |
RJH65D27BDPQ-A0#T2 Releted Information
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