RJP60D0DPE-00#J3
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Specification
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
安装方式 | 表面贴装型 |
Vds-漏源极击穿电压 | 600V |
Pd-功率耗散 | 122W |
Vgs - 栅极-源极电压 | 35ns/90ns |
封装 | LDPAK-4 |
工作温度范围 | 150°C(TJ) |
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