MJD112T4
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Specification
高度 | 2.4 mm |
集电极—基极电压 VCBO | 100 V |
安装方式 | SMD/SMT |
封装 | TO-252 |
集电极—发射极最大电压 VCEO | 100 V |
集电极电流Ic | 2 A |
工作温度范围 | + 150 C |
长度 | 6.6 mm |
晶体管极性 | NPN |
宽度 | 6.2 mm |
发射极 - 基极电压 VEBO | 5 V |
最大集电极截止电流 | 20 uA |
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