SCTH90N65G2V-7
Manufacturer:
Mfr. Part #:
SCTH90N65G2V-7
Allchips #:
R001-SCTH90N65G2V-7-14-H-0000-X-N
Description:
SILICON CARBIDE POWER MOSFET 650
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Specification
Qg-栅极电荷 | 157 nC |
Vgs - 栅极-源极电压 | - 10 V to 22 V |
安装方式 | SMD/SMT |
封装 | H2PAK-7 |
Id-连续漏极电流 | 90 A |
电路数量 | 1 Channel |
Pd-功率耗散 | 330 W |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 650 V |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 26 mOhms |
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SILICON CARBIDE POWER MOSFET 650
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