STB100N6F7
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Specification
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 5.6 mOhms |
Id-连续漏极电流 | 100 A |
Pd-功率耗散 | 125 W |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | TO-263-3 |
Qg-栅极电荷 | 30 nC |
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STB100N6F7
ST Microelectronics
N沟道,60V,100A,5.6mΩ@10V
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