STB11NK50ZT4
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Specification
Qg-栅极电荷 | 49 nC |
高度 | 4.6 mm |
Pd-功率耗散 | 125 W |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 30 V |
封装 | D2PAK |
晶体管极性 | MOSFET |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Rds On-漏源导通电阻 | 480 mOhms |
Id-连续漏极电流 | 10 A |
Vds-漏源极击穿电压 | 500 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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