STB13N60M2
Manufacturer:
Mfr. Part #:
STB13N60M2
Allchips #:
R001-STB13N60M2-14-H-0000-X-N
Description:
N沟道,600V,11A,380mΩ@10V
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Specification
Qg-栅极电荷 | 17 nC |
Rds On-漏源导通电阻 | 380 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 650 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 11 A |
Vgs - 栅极-源极电压 | 25 V |
Pd-功率耗散 | 110 W |
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