STB14NK60ZT4
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Specification
高度 | 4.6 mm |
Qg-栅极电荷 | 75 nC |
Pd-功率耗散 | 160 W |
封装 | D2PAK |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 500 mOhms |
Id-连续漏极电流 | 13.5 A |
宽度 | 9.35 mm |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 600 V |
长度 | 10.4 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
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