STB14NM50N
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Specification
Vds-漏源极击穿电压 | 500 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 42 nC |
Id-连续漏极电流 | 12 A |
Pd-功率耗散 | 90 W |
Vgs - 栅极-源极电压 | 2 V |
Rds On-漏源导通电阻 | 900 mOhms |
工作温度范围 | + 150 C |
封装 | TO-263-3 |
晶体管极性 | MDmesh II Power MOSFET |
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