STB16NF06LT4
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Specification
封装 | D2PAK-3 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Pd-功率耗散 | 45 W |
Vgs - 栅极-源极电压 | 10 V |
Qg-栅极电荷 | 7.3 nC |
高度 | 4.6 mm |
Rds On-漏源导通电阻 | 90 mOhms |
Vds-漏源极击穿电压 | 60 V |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 16 A |
工作温度范围 | - 55 C~+ 175 C |
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