STB18N60DM2
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Specification
晶体管极性 | MOSFET |
Pd-功率耗散 | 90 W |
封装 | TO-263-3 |
Qg-栅极电荷 | 20 nC |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 260 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Id-连续漏极电流 | 12 A |
Vgs - 栅极-源极电压 | 25 V |
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