STB18NM80
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Specification
封装 | TO-263-3 |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 295 mOhms |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 17 A |
工作温度范围 | 150°C(TJ) |
Qg-栅极电荷 | 70 nC |
Vds-漏源极击穿电压 | 800 V |
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