STB20NM50FDT4
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Specification
工作温度范围 | - 65 C~+ 150 C |
晶体管极性 | MOSFET |
Pd-功率耗散 | 192 W |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 30 V |
封装 | TO-263-3 |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Qg-栅极电荷 | 38 nC |
高度 | 4.6 mm |
Vds-漏源极击穿电压 | 500 V |
Id-连续漏极电流 | 20 A |
Rds On-漏源导通电阻 | 250 mOhms |
电路数量 | 1 Channel |
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