STB21N65M5
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Specification
晶体管极性 | Power MOSFET |
Vgs - 栅极-源极电压 | 4 V |
Id-连续漏极电流 | 17 A |
Rds On-漏源导通电阻 | 190 mOhms |
Vds-漏源极击穿电压 | 650 V |
封装 | TO-263-3 |
Pd-功率耗散 | 125 W |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 50 nC |
安装方式 | SMD/SMT |
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