STB23NM60ND
Manufacturer:
Mfr. Part #:
STB23NM60ND
Allchips #:
R001-STB23NM60ND-14-H-20+-X-N
Description:
MOSFET N-CH 600V 19.5A D2PAK
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Specification
Vds-漏源极击穿电压 | 600 V |
Rds On-漏源导通电阻 | 180 mOhms |
工作温度范围 | + 150 C |
Qg-栅极电荷 | 69 nC |
高度 | 4.6 mm |
封装 | D2PAK-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 19.5 A |
Pd-功率耗散 | 150 W |
晶体管极性 | MOSFET |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Vgs - 栅极-源极电压 | 10 V |
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