STB24NM60N
In stock
- STB24NM60N Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Rds On-漏源导通电阻 | 168 mOhms |
Pd-功率耗散 | 125 W |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
工作温度范围 | -55°C~150°C(TJ) |
Id-连续漏极电流 | 17 A |
Qg-栅极电荷 | 46 nC |
封装 | TO-263-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 600 V |
Others include "STB24NM60N" parts
The following parts include 'STB24NM60N'
STB24NM60N Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STB24NM60N
ST Microelectronics
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D2PAK
Learn More >
-
-
-
STB24NM60N
ST Microelectronics
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D2PAK
Learn More >
-
-
-
STB24NM60N
ST Microelectronics
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D2PAK
Learn More >
-
- View All Newest Products from Omron