STB27NM60ND
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Specification
资格等级 | AEC-Q101 |
Vgs - 栅极-源极电压 | 25 V |
电路数量 | 1 Channel |
封装 | TO-263-3 |
晶体管极性 | MOSFET |
工作温度范围 | + 150 C |
Vds-漏源极击穿电压 | 600 V |
Qg-栅极电荷 | 80 nC |
Pd-功率耗散 | 160 W |
Id-连续漏极电流 | 21 A |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 130 mOhms |
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