STB30N65M2AG

Name: STB30N65M2AG
Brand: ST Microelectronics
SKU: R001-STB30N65M2AG-14-H-0000-X-N
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer:

ST Microelectronics

Mfr. Part #:

STB30N65M2AG

Allchips #:

R001-STB30N65M2AG-14-H-0000-X-N

Description:

MOSFET PTD HIGH VOLTAGE

ECAD Model:

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STB30N65M2AG Details
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Quality Control

ST Microelectronics,STB30N65M2AG is available at Allchips.100% original and new guarantee. If comprehensive data for STB30N65M2AG to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

Qg-栅极电荷	30.8 nC
电路数量	1 Channel
晶体管极性	MOSFET
Rds On-漏源导通电阻	0.18 Ohms
Pd-功率耗散	190 W
工作温度范围	- 55 C~+ 150 C
Vgs - 栅极-源极电压	10 V
封装	D2PAK-3
Id-连续漏极电流	20 A
Vds-漏源极击穿电压	650 V
安装方式	SMD/SMT
资格等级	AEC-Q101

	Ship Fee	Lead Time	Processing Time
DHL	$20.00-$40.00(0.50KG)	2-5 days	Shipping fee depend on different zone and country
UPS	$20.00-$45.00(0.50KG)	2-5 days
TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
Air, Sea/air and Sea	$2.00-$3.00(0.10KG)	7-30 days
FedEX	$20.00-$40.00(0.50KG)	3-7 days