STB42N65M5
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Specification
Id-连续漏极电流 | 33 A |
Vds-漏源极击穿电压 | 650 V |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
高度 | 4.6 mm |
封装 | TO-263-3 |
长度 | 10.4 mm |
宽度 | 9.35 mm |
Vgs - 栅极-源极电压 | 25 V |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 79 mOhms |
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