STB46N30M5
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Specification
Vds-漏源极击穿电压 | 300V |
资格等级 | AEC-Q101 |
Pd-功率耗散 | 250W(Tc) |
安装方式 | SMD/SMT |
工作温度范围 | 150°C(TJ) |
晶体管极性 | MOSFET |
封装 | TO-263-3 |
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