STB47N60DM6AG
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Specification
Qg-栅极电荷 | 55 nC |
Rds On-漏源导通电阻 | 80 mOhms |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 36 A |
封装 | D2PAK-3 |
电路数量 | 1 Channel |
Pd-功率耗散 | 250 W |
资格等级 | AEC-Q101 |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 600 V |
晶体管极性 | MOSFET |
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STB47N60DM6AG
ST Microelectronics
表面贴装型 D²PAK(TO-263)
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