STB57N65M5
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Specification
Vgs - 栅极-源极电压 | 5V @ 250uA |
工作温度范围 | 150°C(TJ) |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 650 V |
Pd-功率耗散 | 250 W |
Id-连续漏极电流 | 26.5 A |
Rds On-漏源导通电阻 | 63 mOhms |
封装 | TO-263-3 |
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