STB60NF06LT4
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Specification
Vds-漏源极击穿电压 | 60 V |
封装 | TO-263-2 |
Pd-功率耗散 | 110 W |
Id-连续漏极电流 | 60 A |
高度 | 4.6 mm |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 14 mOhms |
工作温度范围 | - 65 C~+ 175 C |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 15 V |
长度 | 10.4 mm |
宽度 | 9.35 mm |
资格等级 | AEC-Q101 |
晶体管极性 | MOSFET |
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