STB75NF20
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Specification
Vgs - 栅极-源极电压 | 20 V |
高度 | 4.6 mm |
Id-连续漏极电流 | 75 A |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
工作温度范围 | - 50 C~+ 150 C |
封装 | D2PAK |
长度 | 10.4 mm |
宽度 | 9.35 mm |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 200 V |
Rds On-漏源导通电阻 | 34 mOhms |
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