STB75NF75LT4
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Specification
高度 | 4.6 mm |
Id-连续漏极电流 | 75 A |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 15 V |
Vds-漏源极击穿电压 | 75 V |
资格等级 | AEC-Q101 |
封装 | TO-263-3 |
长度 | 10.4 mm |
宽度 | 9.35 mm |
晶体管极性 | MOSFET |
Pd-功率耗散 | 300 W |
Rds On-漏源导通电阻 | 10 mOhms |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
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