STB80N20M5
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Specification
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
Pd-功率耗散 | 190 W |
工作温度范围 | + 150 C |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 61 A |
Qg-栅极电荷 | 104 nC |
Rds On-漏源导通电阻 | 23 mOhms |
Vds-漏源极击穿电压 | 200 V |
晶体管极性 | N-Channel MDmesh V Power MOSFET |
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