STB80NF55-08AG
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Specification
封装 | TO-263-3 |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 55 V |
Pd-功率耗散 | 300W(Tc) |
Rds On-漏源导通电阻 | 8 mOhms |
资格等级 | AEC-Q101 |
工作温度范围 | -55°C~175°C(TJ) |
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