STD100N10F7
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Specification
晶体管极性 | MOSFET |
Qg-栅极电荷 | 56 nC |
Pd-功率耗散 | 120 W |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 4.5V @ 250uA |
Rds On-漏源导通电阻 | 8 mOhms |
Vds-漏源极击穿电压 | 100 V |
电路数量 | 1 Channel |
Id-连续漏极电流 | 80 A |
封装 | TO-252-3 |
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