STD10NM60ND
In stock
- STD10NM60ND Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 650 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 600 mOhms |
Vgs - 栅极-源极电压 | 25 V |
Pd-功率耗散 | 70 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
封装 | TO-252-3 |
晶体管极性 | MOSFET",,"子类别 |
Id-连续漏极电流 | 8 A |
Others include "STD10NM60ND" parts
The following parts include 'STD10NM60ND'
STD10NM60ND Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STD10NM60N
ST Microelectronics
N沟 600V 10A
Learn More >
-
-
-
STD10NM60N
ST Microelectronics
N沟 600V 10A
Learn More >
-
-
-
STD10NM60N
ST Microelectronics
N沟 600V 10A
Learn More >
-
-
-
STD10NM60N
ST Microelectronics
N沟 600V 10A
Learn More >
-
-
-
STD10NM60ND
ST Microelectronics
表面贴装型 N 通道 600V 8A(Tc) 70W(Tc) DPAK
Learn More >
-
-
-
STD10NM60ND
ST Microelectronics
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
- View All Newest Products from Omron