STD11N50M2
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Specification
Vgs - 栅极-源极电压 | 25 V |
封装 | TO-252-3 |
Vds-漏源极击穿电压 | 500 V |
Id-连续漏极电流 | 8 A |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 12 nC |
Pd-功率耗散 | 85 W |
Rds On-漏源导通电阻 | 450 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
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