STD11NM65N
In stock
- STD11NM65N Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
晶体管极性 | MOSFET |
Pd-功率耗散 | 110W(Tc) |
Id-连续漏极电流 | 11 A |
Vds-漏源极击穿电压 | 650 V |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
Rds On-漏源导通电阻 | 425 mOhms |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
Others include "STD11NM65N" parts
The following parts include 'STD11NM65N'
STD11NM65N Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STD11NM65N
ST Microelectronics
表面贴装型 N 通道 650V 11A(Tc) 110W(Tc) DPAK
Learn More >
-
-
-
STD11NM65N
ST Microelectronics
表面贴装型 N 通道 650V 11A(Tc) 110W(Tc) DPAK
Learn More >
-
- View All Newest Products from Omron