STD120N4F6
In stock
- STD120N4F6 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 65 nC |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 40 V |
资格等级 | AEC-Q101 |
Vgs - 栅极-源极电压 | 20 V |
封装 | TO-252-3 |
晶体管极性 | MOSFET |
Pd-功率耗散 | 110 W |
Rds On-漏源导通电阻 | 4 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 80 A |
电路数量 | 1 Channel |
Others include "STD120N4F6" parts
The following parts include 'STD120N4F6'
STD120N4F6 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STD120N4F6
ST Microelectronics
表面贴装型 N 通道 40V 80A(Tc) 110W(Tc) DPAK
Learn More >
-
-
-
STD120N4F6
ST Microelectronics
表面贴装型 N 通道 40V 80A(Tc) 110W(Tc) DPAK
Learn More >
-
-
-
STD120N4F6
ST Microelectronics
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
STD120N4F6
ST Microelectronics
表面贴装型 N 通道 40V 80A(Tc) 110W(Tc) DPAK
Learn More >
-
-
-
STD120N4F6
ST Microelectronics
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
STD120N4F6
ST Microelectronics
表面贴装型 N 通道 40V 80A(Tc) 110W(Tc) DPAK
Learn More >
-
- View All Newest Products from Omron