STD12N60M2
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Specification
Vds-漏源极击穿电压 | 600 V |
工作温度范围 | 150°C(TJ) |
晶体管极性 | MDmesh M2 |
Qg-栅极电荷 | 16 nC |
高度 | 2.4 mm |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Pd-功率耗散 | 85 W |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 395 mOhms |
Id-连续漏极电流 | 9 A |
长度 | 6.2 mm |
宽度 | 6.6 mm |
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