STD18N55M5
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Specification
Rds On-漏源导通电阻 | 240 mOhms |
Id-连续漏极电流 | 13 A |
晶体管极性 | MOSFET |
封装 | TO-252-3 |
工作温度范围 | 150°C(TJ) |
Vds-漏源极击穿电压 | 550 V |
Vgs - 栅极-源极电压 | 5V @ 250uA |
安装方式 | SMD/SMT |
Pd-功率耗散 | 90 W |
电路数量 | 1 Channel |
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