STD2HNK60Z
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Specification
长度 | 6.6 mm |
宽度 | 6.2 mm |
Vgs - 栅极-源极电压 | 10 V |
Id-连续漏极电流 | 2 A |
晶体管极性 | MOSFET |
Pd-功率耗散 | 45 W |
封装 | TO-252-2 |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Rds On-漏源导通电阻 | 4.8 Ohms |
Qg-栅极电荷 | 11 nC |
高度 | 2.4 mm |
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