STD3N95K5AG
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Specification
Id-连续漏极电流 | 2 A |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 950 V |
Pd-功率耗散 | 45 W |
Rds On-漏源导通电阻 | 4.3 Ohms |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 3.4 nC |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 30 V |
资格等级 | AEC-Q101 |
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