STD5N20LT4
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Specification
Qg-栅极电荷 | 5 nC |
高度 | 2.4 mm |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 700 mOhms |
Vds-漏源极击穿电压 | 200 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Pd-功率耗散 | 33 W |
Vgs - 栅极-源极电压 | 5 V |
Id-连续漏极电流 | 5 A |
封装 | DPAK |
安装方式 | SMD/SMT |
长度 | 6.6 mm |
宽度 | 6.2 mm |
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