STD5N95K3
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Specification
Qg-栅极电荷 | 19 nC |
Pd-功率耗散 | 90 W |
安装方式 | SMD/SMT |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 3 Ohms |
工作温度范围 | -55°C~150°C(TJ) |
Id-连续漏极电流 | 4 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 950 V |
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