STD70N10F4
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Specification
Qg-栅极电荷 | 85 nC |
高度 | 2.4 mm |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 19.5 mOhms |
封装 | DPAK |
Pd-功率耗散 | 125 W |
长度 | 6.6 mm |
宽度 | 6.2 mm |
晶体管极性 | Power MOSFETs |
Vds-漏源极击穿电压 | 100 V |
Vgs - 栅极-源极电压 | 10 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 60 A |
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STD70N10F4
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